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MCQs

Total Questions : 90 | Page 9 of 9 pages
Question 81. In a semiconductor diode, the barrier offers opposition to
  1.    Holes in P-region only
  2.    Free electrons in N-region only
  3.    Majority as well as minority carriers in both regions
  4.    Majority carriers in both regions
 Discuss Question
Answer: Option D. -> Majority carriers in both regions
Question 82. Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.
  1.    Both A and R are true but R is not a correct explanation of A
  2.    Both A and R are true and R is correct explanation of A
  3.    A is false but R is true
  4.    A is true but R is false
 Discuss Question
Answer: Option D. -> A is true but R is false
Question 83. As compared to bipolar junction transistor, a FET
  1.    Has higher input resistance
  2.    Is less noisy
  3.    Has better thermal stability
  4.    All of these
 Discuss Question
Answer: Option D. -> All of these
Question 84. Which one of the following is not a characteristic of a ferroelectric material?
  1.    High dielectric constant
  2.    No hysteresis
  3.    Electric dipole moment
  4.    Ferroelectric characteristic only above the curie point
 Discuss Question
Answer: Option D. -> Ferroelectric characteristic only above the curie point
Question 85. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
  1.    In arbitrary direction
  2.    Normal to both current and magnetic field
  3.    Antiparallel to magnetic field
  4.    In the direction of current
 Discuss Question
Answer: Option B. -> Normal to both current and magnetic field
Question 86. Permalloy is
  1.    A nickel an iron alloy having high permeability
  2.    A conon-ferrous alloy used in aircraft industry
  3.    A polymer
  4.    A variety of stainless steel
 Discuss Question
Answer: Option A. -> A nickel an iron alloy having high permeability
Question 87. In which of these is reverse recovery time nearly zero?
  1.    Zener diode
  2.    Tunnel diode
  3.    PIN diode
  4.    Schottky diode
 Discuss Question
Answer: Option D. -> Schottky diode
Question 88. Fermi level is the amount of energy in which
  1.    Must be given to an electron move to conduction band
  2.    None of these
  3.    An electron can have at room temperature
  4.    A hole can have at room temperature
 Discuss Question
Answer: Option A. -> Must be given to an electron move to conduction band
Question 89. In monolithic ICs, all the components are fabricated by
  1.    Diffusion process
  2.    Evaporation
  3.    None
  4.    Oxidation
 Discuss Question
Answer: Option A. -> Diffusion process
Question 90. When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
  1.    may be equal to or less than breakdown voltage
  2.    should not exceed the breakdown voltage
  3.    should not exceed one third the breakdown voltage
  4.    should not exceed half the breakdown voltage
 Discuss Question
Answer: Option C. -> should not exceed one third the breakdown voltage

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