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MCQs

Total Questions : 90 | Page 3 of 9 pages
Question 21. The depletion layer width of Junction
  1.    Decreases with light doping
  2.    Is independent of applied voltage
  3.    Is increased under reverse bias
  4.    Increases with heavy doping
 Discuss Question
Answer: Option C. -> Is increased under reverse bias
Question 22. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
  1.    The number of free electrons increases
  2.    The number of free electrons increases but the number of holes decreases
  3.    The number of free electrons and holes increase by the same amount
  4.    The number of free electrons and holes increase but not by the same amount
 Discuss Question
Answer: Option C. -> The number of free electrons and holes increase by the same amount
Question 23. If too large current passes through the diode
  1.    All electrons will leave
  2.    All holes will freeze
  3.    Excessive heat may damage the diode
  4.    Diode will emit light
 Discuss Question
Answer: Option C. -> Excessive heat may damage the diode
Question 24. Which of the following has highest resistivity?
  1.    Mica
  2.    Paraffin wax
  3.    Air
  4.    Mineral oil
 Discuss Question
Answer: Option C. -> Air
Question 25. At room temperature the current in an intrinsic semiconductor is due to
  1.    Holes
  2.    Electrons
  3.    Ions
  4.    Holes and electrons
 Discuss Question
Answer: Option D. -> Holes and electrons
Question 26. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
  1.    100
  2.    99
  3.    1.01
  4.    0.99
 Discuss Question
Answer: Option A. -> 100
Question 27. Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
  1.    Both A and R are true and R is correct explanation of A
  2.    Both A and R are true but R is not a correct explanation of A
  3.    A is true but R is false
  4.    A is false but R is true
 Discuss Question
Answer: Option A. -> Both A and R are true and R is correct explanation of A
Question 28. In a bipolar transistor, the base collector junction has
  1.    Forward bias
  2.    Reverse bias
  3.    Zero bias
  4.    Zero or forward bias
 Discuss Question
Answer: Option B. -> Reverse bias
Question 29. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
  1.    True
  2.    False
 Discuss Question
Answer: Option B. -> False
Question 30. The output, V-I characteristics of an Enhancement type MOSFET has
  1.    Only an ohmic region
  2.    Only a saturation region
  3.    An ohmic region at low voltage value followed by a saturation region at higher voltages
  4.    An ohmic region at large voltage values preceded by a saturation region at lower voltages
 Discuss Question
Answer: Option C. -> An ohmic region at low voltage value followed by a saturation region at higher voltages

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