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MCQs

Total Questions : 848 | Page 5 of 85 pages
Question 41. A P-N junction diode dynamic conductance is directly proportional to
  1.    the applied voltage
  2.    the temperature
  3.    its current
  4.    thermal voltage
 Discuss Question
Answer: Option C. -> its current
Answer: (c).its current
Question 42. The thermionic emission current is given by
  1.    Fermi-Dirac distribution
  2.    Maxwell's equation
  3.    Richardson Dushman equation
  4.    Langmuir Child law
 Discuss Question
Answer: Option C. -> Richardson Dushman equation
Answer: (c).Richardson Dushman equation
Question 43. The conductivity of a semiconductor crystal due to any current carrier is not proportional to
  1.    mobility of the carrier
  2.    effective density of states in the conduction band
  3.    electronic charge
  4.    surface states in the semiconductor
 Discuss Question
Answer: Option A. -> mobility of the carrier
Answer: (a).mobility of the carrier
Question 44. In forward active region, the operation of a BJT
  1.    both junctions are forward biased
  2.    both junctions are reverse biased
  3.    emitter base junction is forward biased and base collector junction is reverse biased
  4.    emitter base junction is reverse biased and base collector junction is reverse biased
 Discuss Question
Answer: Option C. -> emitter base junction is forward biased and base collector junction is reverse biased
Answer: (c).emitter base junction is forward biased and base collector junction is reverse biased
Question 45. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is
  1.    200 V
  2.    141.4 V
  3.    100 V
  4.    86 V
 Discuss Question
Answer: Option B. -> 141.4 V
Answer: (b).141.4 V
Question 46. In p type semiconductor holes are majority carriers.
  1.    True
  2.    False
  3.    May be True or False
  4.    Can't say
 Discuss Question
Answer: Option A. -> True
Answer: (a).True
Question 47. Due to the formation of Schottky defects the density of the crystal
  1.    increases slightly
  2.    increases appreciably
  3.    decreases slightly
  4.    decreases appreciably
 Discuss Question
Answer: Option C. -> decreases slightly
Answer: (c).decreases slightly
Question 48. The O/P Power of a power amplifier is several times its input power. It is possible because
  1.    power amplifier introduces a -ve resistance
  2.    there is +ve feed back in the circuit
  3.    step up transformer is use in the circuit
  4.    power amplifier converts a part of I/P d.c. power into a.c. power
 Discuss Question
Answer: Option D. -> power amplifier converts a part of I/P d.c. power into a.c. power
Answer: (d).power amplifier converts a part of I/P d.c. power into a.c. power
Question 49. The band gap of silicon at 300K is
  1.    1.36 eV
  2.    1.10 eV
  3.    0.80 eV
  4.    0.67 eV
 Discuss Question
Answer: Option B. -> 1.10 eV
Answer: (b).1.10 eV
Question 50. The density of states (i.e. number of states per eV per m³) in the conduction band for energy level E is proportional to
  1.    √E
  2.    E
  3.    E^(1.5)
  4.    E²
 Discuss Question
Answer: Option A. -> √E
Answer: (a).√E

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