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MCQs

Total Questions : 848 | Page 4 of 85 pages
Question 31. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that
  1.    the conductivity of silicon will be less than that of germanium at room temperature
  2.    the conductivity of silicon will be more than that of germanium at room temperature
  3.    the conductivity of two will be same at 60°C
  4.    the conductivity of two will be same at 100°C
 Discuss Question
Answer: Option A. -> the conductivity of silicon will be less than that of germanium at room temperature
Answer: (a).the conductivity of silicon will be less than that of germanium at room temperature
Question 32. The atomic number of silicon is 14. It can be therefore concluded that
  1.    a silicon atom contains 14 protons
  2.    a silicon atom contains 14 neutrons
  3.    a silicon atom contains 14 electrons
  4.    all of the above
 Discuss Question
Answer: Option D. -> all of the above
Answer: (d).all of the above
Question 33. Before doping the semiconductor material is
  1.    dehydrated
  2.    heated
  3.    hardened
  4.    purified
 Discuss Question
Answer: Option D. -> purified
Answer: (d).purified
Question 34. X-rays cannot penetrate through a thick sheet of
  1.    wood
  2.    paper
  3.    lead
  4.    aluminium
 Discuss Question
Answer: Option C. -> lead
Answer: (c).lead
Question 35. In n channel JFET, the gate voltage is made more negative
  1.    the channel width will increase
  2.    the channel width will decrease
  3.    the channel width and drain current will decrease
  4.    the channel width will decrease and drain current will increase
 Discuss Question
Answer: Option C. -> the channel width and drain current will decrease
Answer: (c).the channel width and drain current will decrease
Question 36. Metals approach superconductivity conditions
  1.    near absolute zero temperature
  2.    near critical temperature
  3.    at triple point
  4.    under the conditions of high temperature and pressure
 Discuss Question
Answer: Option A. -> near absolute zero temperature
Answer: (a).near absolute zero temperature
Question 37. The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective base width caused by
  1.    electron-hole recombination at the base
  2.    reverse biasing of the base collector junction
  3.    forward biasing of emitter base junction
  4.    the early removal of stored base charge during saturation to cut off switching
 Discuss Question
Answer: Option B. -> reverse biasing of the base collector junction
Answer: (b).reverse biasing of the base collector junction
Question 38. In a 741 OP-amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to
  1.    applied load
  2.    internal compensation
  3.    impedance of the source
  4.    power dissipation in the chip
 Discuss Question
Answer: Option D. -> power dissipation in the chip
Answer: (d).power dissipation in the chip
Question 39. At absolute zero temperature a semiconductor behaves like
  1.    an insulator
  2.    a super conductor
  3.    a good conductor
  4.    a variable resistor
 Discuss Question
Answer: Option A. -> an insulator
Answer: (a).an insulator
Question 40. The current due to thermionic emission is given by Richardson Dushman equation.
  1.    True
  2.    False
  3.    May be True or False
  4.    Can't say
 Discuss Question
Answer: Option A. -> True
Answer: (a).True

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