The source of a silicon (ni = 1010 per cm3) n-channel MOS transistor has an are

Question

The source of a silicon (ni = 1010 per cm3) n-channel MOS transistor has an area of 1 sq Î¼m and a depth of 1 Î¼m. If the dopant density in the source is 1019/cm3, the number of holes in the source region with the above volume is approximately

Options:

A . 107

B . 100

C . 10

D . 0

Answer: Option D

-NA-

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