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MCQs

Total Questions : 67 | Page 4 of 7 pages
Question 31. The most commonly used semiconductor is ___________
  1.    Germanium
  2.    Silicon
  3.    Carbon
  4.    Sulphur
 Discuss Question
Answer: Option B. -> Silicon
Question 32. An n-type semiconductor is
  1.    Positively charged
  2.    Negatively charged
  3.    Electrically neutral
  4.    None of the above
 Discuss Question
Answer: Option C. -> Electrically neutral
Question 33.  Atoms that normally have three electrons in their outer shell are called __________________ atoms.
  1.    trivalent
  2.    pentavalent
  3.    tetravalent
  4.    charged
 Discuss Question
Answer: Option A. -> trivalent
Question 34.  What is the most significant development in electronics since World War II?
  1.    the development of color TV
  2.    the development of the diode
  3.    the development of the transistor
  4.    the development of the TRIAC
 Discuss Question
Answer: Option C. -> the development of the transistor
Question 35.  What causes the depletion region?
  1.    doping
  2.    diffusion
  3.    barrier potential
  4.    ions
 Discuss Question
Answer: Option B. -> diffusion
Question 36.  Ionization within a P-N junction causes a layer on each side of the barrier called the:
  1.    junction
  2.    depletion region
  3.    barrier voltage
  4.    forward voltage
 Discuss Question
Answer: Option B. -> depletion region
Question 37.  Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
  1.    1
  2.    2
  3.    4
  4.    6
 Discuss Question
Answer: Option C. -> 4
Question 38.  Reverse bias is a condition that essentially ___________ current through the diode.
  1.    allows
  2.    prevents
  3.    increases
  4.    blocks
 Discuss Question
Answer: Option B. -> prevents
Question 39.  What is an energy gap?
  1.    the space between two orbital shells
  2.    the energy equal to the energy acquired by an electron passing a 1 V electric field
  3.    the energy band in which electrons can move freely
  4.    an energy level at which an electron can exist
 Discuss Question
Answer: Option A. -> the space between two orbital shells
Question 40.  When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:
  1.    1949, William Schockley
  2.    1955, Walter Bratten
  3.    1959, Robert Noyce
  4.    1960, John Bardeen
 Discuss Question
Answer: Option C. -> 1959, Robert Noyce

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