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Question
A phosphorous doped silicon semiconductor ( doping density: 1017/cm3) is heated from 100oC to
200oC. Which one of the following statements is CORRECT ?
Options:
A .  Position of Fermi level moves towards conduction band
B .  Position of dopant level moves towards conduction band
C .  Position of Fermi level moves towards middle of energy gap
D .  Position of dopant level moves towards middle of energy gap
Answer: Option C


-NA-



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