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12th Grade > Physics

SEMICONDUCTORS MCQs

Total Questions : 30 | Page 1 of 3 pages
Question 1. A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor R in the circuit figure, so that halfwave rectification occurs. If the forward resistance of the diode is negligible compared to R, the RMS voltage (in volt) across R is approximately  
A Sinusoidal Voltage Of Peak Value 200 Volt Is Connected To ...
  1.    200
  2.    100
  3.    200√2
  4.    280
 Discuss Question
Answer: Option C. -> 200√2
:
C
If half wave rectifier the output voltage is the RMS voltage
=Vo2=2002
Question 2. In the half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be
  1.    25 Hz
  2.    50 Hz 
  3.    70.7 Hz
  4.    100 Hz
 Discuss Question
Answer: Option B. -> 50 Hz 
:
B
In half wave rectifier, we get the output only in one half cycle of input AC therefore, the frequency of the ripple of the output is same as that of input AC ie, 50 Hz.
Question 3. Consider the junction diode is idea. The value of current in the figure is
 Consider The Junction Diode Is Idea. The Value Of Current In...
  1.    zero
  2.    10−2 A
  3.    10−1 A
  4.    10−3 A
 Discuss Question
Answer: Option B. -> 10−2 A
:
B
If=41300=1100=102A
Question 4. P-type semiconductor are
  1.    positively charged
  2.    produced when boron is added as an impurity   
  3.    produced when phosphorus is added as an impurity to silicon   
  4.    produced when carbon is added as an impurity to germanium.
 Discuss Question
Answer: Option B. -> produced when boron is added as an impurity   
:
B
Boron has valency three. When boron is doped in a pure semiconductor, then p-type semiconductor is formed.
Question 5. The correct curve between potential (V) and distance (d) near p-n junction is  
The Correct Curve Between Potential (V) And Distance (d) Nea...
  1.    a
  2.    b
  3.    c
  4.    d
 Discuss Question
Answer: Option A. -> a
:
A
V-d curve near the junction will be as shown by curve (a).
Question 6. Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the valve of V0 changes by Ge And Si Diodes Conduct At 0.3 V And 0.7 V Respectively. In...
  1.     0.2 V
  2.    0.4 V
  3.    0.6 V
  4.    0.8 V
 Discuss Question
Answer: Option B. -> 0.4 V
:
B
Consider the case when Ge and Si diodes are connected as show in the given figure.
Equivalent voltage drop across the combination Ge and Si diode = 0.3 V
Current i=120.35kΩ=2.34mA
Out put voltage V0=Ri=5kΩ×2.34mA=11.7V
Now consider the case when diode connection are reversed. In this case voltage drop across the diode's combination = 0.7 V
current i=120.75kΩ=2.26mA
V0=iR=2.26mA×5kΩ=11.3V
Hence charge in the value of v0 =11.7 - 11.3=0.4V
Question 7. In the case of p-n junction diode at a high value of reverse bias voltage, the current rises sharply. The value of reverse bias voltage is known as
  1.    cut-off voltage
  2.    zener voltage 
  3.    inverse voltage
  4.    critical voltage
 Discuss Question
Answer: Option B. -> zener voltage 
:
B
In reverse bias of p-n junction when a high voltage is applied, electric breakdown of junction takes place, resulting in a large increase in reverse current. This high voltage applied is called zener voltage.
Question 8. A working transistor with its three legs marked P, Q and R is tested using a multi-meter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to P or Q, some resistance is seen on the multi-meter.  Which of the following is true for the transistor?
  1.    It is an n-p-n transistor with R as collector
  2.    It is an n-p-n transistor with R as base     
  3.    It is an p-n-p transistor with R as collector  
  4.    It is an p-n-p transistor with R as emitter
  5.    35 mA
 Discuss Question
Answer: Option B. -> It is an n-p-n transistor with R as base     
:
B
When a multimeter is connected between P and Q there is no conduction between P and Q, then P and Q are of same type of semiconductor, ie, either both are on n-type or of p-type. It means emitter and collector of a transistor are P and Q. When R is connected to negative terminal of multimeter and positive terminal to P or Q, then emitter-base junction will conduct to some extent due to reverse biasing.
The similar is the case of collector – base junction. Thus the transistor is n-p-n transistor with R as base.
Question 9. A transistor has a base current of 1 mA and emitter current 90 mA. The collector current will be
  1.    90 mA
  2.    1 mA
  3.    89 mA
  4.    91 mA
 Discuss Question
Answer: Option C. -> 89 mA
:
C
Ic=IeIb = 90 - 1 = 89mA.
Question 10. In an unbiased p-n junction,
  1.    potential at p is equal to that at n   
  2.    potential at p is +ve and that at n is –ve  
  3.    potential at p is more than that at n
  4.    potential at p is less than that at n
 Discuss Question
Answer: Option D. -> potential at p is less than that at n
:
D
Option (d)
At the barrier, there are electron concentration on p side.

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