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MCQs

Total Questions : 81 | Page 1 of 9 pages
Question 1. The gate voltage in a JFET at which drain current becomes zero is called ___________ voltage
  1.    saturation
  2.    pinch-off
  3.    active
  4.    cut-off
 Discuss Question
Answer: Option B. -> pinch-off
Question 2. The output characteristics of a JFET closely resemble the output characteristics of a ___________ valve
  1.    pentode
  2.    tetrode
  3.    triode
  4.    diode
 Discuss Question
Answer: Option A. -> pentode
Question 3. The constant-current region of a JFET lies between
  1.    cut off and saturation
  2.    cut off and pinch-off
  3.    o and IDSS
  4.    pinch-off and breakdown
 Discuss Question
Answer: Option D. -> pinch-off and breakdown
Question 4. A JFET has high input impedance because ___________
  1.    it is made of semiconductor material
  2.    input is reverse biased
  3.    of impurity atoms
  4.    none of the above
 Discuss Question
Answer: Option B. -> input is reverse biased
Question 5. A MOSFET differs from a JFET mainly because ___________
  1.    of power rating
  2.    the MOSFET has two gates
  3.    the JFET has a pn junction
  4.    none of the above
 Discuss Question
Answer: Option C. -> the JFET has a pn junction
Question 6. If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________
  1.    is decreased
  2.    is increased
  3.    remains the same
  4.    none of the above
 Discuss Question
Answer: Option A. -> is decreased
Question 7. If the gate of a JFET is made less negative, the width of the conducting channel ___________
  1.    remains the same
  2.    is decreased
  3.    is increased
  4.    none of the above
 Discuss Question
Answer: Option C. -> is increased
Question 8. If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________
  1.    is increased
  2.    is decreased
  3.    remains the same
  4.    none of the above
 Discuss Question
Answer: Option A. -> is increased
Question 9. In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________
  1.    1
  2.    11.4
  3.    8.75
  4.    3.2
 Discuss Question
Answer: Option B. -> 11.4
Question 10. In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________
  1.    450
  2.    45
  3.    2.52
  4.    4.5
 Discuss Question
Answer: Option D. -> 4.5

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